ar X iv : 0 70 9 . 18 94 v 2 [ co nd - m at . m es - h al l ] 1 6 O ct 2 00 7 Direct mechanical mixing in a nanoelectromechanical diode
نویسنده
چکیده
We observe direct mechanical mixing in nanoelectromechanical transistors fabricated in semiconductor materials operating in the radio frequency band of 10 ∼ 1000 MHz. The device is made of a mechanically flexible pillar with a length of 240 nm and a diameter of 50 nm placed between two electrodes in an impedance matched coplanar wave guide. We find a nonlinear I-V characteristic, which enables radio frequency mixing of two electromagnetic signals via the nanomechanical transistor. Potential applications for this mixer are ultrasensitive displacement detection or signal processing in communication electronic circuits requiring high-throughput insulation.
منابع مشابه
ar X iv : 0 70 5 . 38 05 v 2 [ co nd - m at . m es - h al l ] 2 2 O ct 2 00 7 Coulomb blockade in graphene nanoribbons
We propose that recent transport experiments revealing the existence of an energy gap in graphene nanoribbons may be understood in terms of Coulomb blockade. Electron interactions play a decisive role at the quantum dots which form due to the presence of necks arising from the roughness of the graphene edge. With the average transmission as the only fitting parameter, our theory shows good agre...
متن کاملRTES-03 Interfaces.indd
[ B ur ns 20 07 ] B u rn s, A & W el lin gs , A C o n cu rr en t a n d R ea l-T im e Pr o gr am m in g in A d a, e d it io n C am b ri d ge U n iv er si ty P re ss 2 00 7 [ M o to ro la 19 96 ] M o to ro la Ti m e Pr o ce ss in g U n it R ef er en ce M an u al 1 99 6 p p . 1 -1 42 [ M o to ro la 20 00 ] M o to ro la M PC 56 5 & M PC 56 6 2 00 0 p p . 1 -1 31 2 [ P ea co ck 19 97 ] Pe ac o ck , ...
متن کاملar X iv : 0 80 6 . 00 94 v 1 [ co nd - m at . m es - h al l ] 3 1 M ay 2 00 8 Domain walls in gapped graphene
The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support mid-gap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the mid-gap band is partially filled,th...
متن کاملar X iv : 1 00 5 . 53 94 v 1 [ co nd - m at . m es - h al l ] 2 8 M ay 2 01 0 Reduced frequency noise in superconducting resonators
We report a reduction of the frequency noise in coplanar waveguide superconducting resonators. The reduction of 7 dB is achieved by removing the exposed dielectric substrate surface from the region with high electric fields and by using NbTiN. In a model-analysis the surface of NbTiN is found to be a negligible source of noise, experimentally supported by a comparison with NbTiN on SiOx resonat...
متن کاملar X iv : 0 70 7 . 43 78 v 1 [ co nd - m at . m es - h al l ] 3 0 Ju l 2 00 7 Anderson Transitions
The physics of Anderson transitions between localized and metallic phases in disordered systems is reviewed. The term “Anderson transition” is understood in a broad sense, including both metalinsulator transitions and quantum-Hall-type transitions between phases with localized states. The emphasis is put on recent developments, which include: multifractality of critical wave functions, critical...
متن کامل